December 2021
The EPS proudly congratulates the latest Senior Members and Fellows:
Senior Members Fellows
Attila Bonyar Kemal Aygun
Asmah Mat Taib Chuan Seng Tan
Sungwook Moon
Congratulations to the EPS Santa Clara Valley / Oakland East Bay/San Francisco Chapter, which was named “2021 Region 6 Outstanding Chapter of the Year” (selected from among Society Chapters and Technical Councils but not Affinity Groups).
The award plaque will be presented at the 2022 Region 6 Op Com meeting that will be held in Phoenix, AZ in late January.
Nominations for the 2022 Distinguished Achievement Certificates will be accepted two times per year.
The first round will run from January 1 through June 30 and the second round from August 30 through October 31.
The EPS Awards Program recognizes contributions to the profession, industry and the Society through a comprehensive set of awards and recognitions.
EPS Major Awards
A series of EPS Major Awards, recognizing technical contributions and service, is administered by the EPS Awards Committee:
· Outstanding Sustained Technical Contribution Award
· Electronics Manufacturing Technology Award
· David Feldman Outstanding Contribution Award
· Exceptional Technical Achievement Award
· Outstanding Young Engineer Award
· Regional Contributions Award
The Society also sponsors a PhD Fellowship to promote, recognize, and support PhD level study and research within the Electronics Packaging Society’s field of interest.
PhD Fellowship Nominiation Form
Nomination Period September 8, 2021 - January 26, 2022
The 2022 IEEE 26th Workshop on Signal and Power Integrity (SPI) will be held from May 22 to May 25 at the Lower Castle campus of the University of Siegen in Siegen, Germany.
Over the past two decades, SPI has evolved into a forum of exchange on the latest research and developments on design, characterization, modeling, simulation and testing for Signal and Power Integrity at chip, package, board and system level. The workshop brings together developers and researchers from industry and academia in order to encourage cooperation.
The Technical Program Committee (TPC) is seeking original and unpublished contributions on all aspects of Signal and Power Integrity.
Abhijit Sathaye
Principal Engineer
Manufacturing and Product Engineering
Intel Corporation
Hillsboro, OR, USA
abhijit.sathaye@intel.com
Abstract:
Testing Si devices in high volume manufacturing (HVM) is getting more challenging and expensive, owing to the increasing complexity of the devices under test. Semiconductor companies are adding more capabilities on a package, transistor density is going up, end user applications are more varied than ever before.
Adaptive test techniques have been used in industry for many years now. Applications of machine learning (ML) techniques have also been demonstrated and widely used in test today.
Lukas Burgholzer∗ Robert Wille∗†∗
Institute for Integrated Circuits, Johannes Kepler University Linz, Austria
†Software Competence Center Hagenberg GmbH (SCCH), Hagenberg, Austria
lukas.burgholzer@jku.at robert.wille@jku.at
https://iic.jku.at/eda/research/quantum/
Quantum computers aim to change the way we tackle certain problems in the future. Numerous quantum computing applications with a near-term perspective (e.g., for finance, chemistry, machine learning, optimization) and with a long-term perspective (i.e., cryptography, database search) are currently investigated. However, in order to realize those, a multitude of (computationally complex) design tasks have to be conducted—eventually forming a process called quantum circuit compilation. However, in order to realize those, a multitude of (computationally complex) design tasks have to be conducted—eventually forming a process called quantum circuit compilation. However, in order to realize those, a multitude of (computationally complex) design tasks have to be conducted—eventually forming a process called quantum circuit compilation. This results in descriptions of quantum algorithms at various abstraction levels which may significantly differ in their basis operations and structure.
Peng Zhao1,2 , Yu Dian Lim1 , Hong Yu Li2 , Guidoni Luca3 , and Chuan Seng Tan1,*
1Nanyang Technological University, Singapore
2A*STAR Institute of Microelectronics, Singapore 3Université de Paris, France
*Email: tancs@ntu.edu.sg
INTRODUCTION
With the slowdown of transistor node scaling in the past decade, advanced three-dimensional (3D) integration technologies have been developed as an alternative approach for the continuity of Moore’s law, specifically in reducing form factor, cost, power and increasing performance. By extending the conventional two-dimensional layouts, assembly, and interconnections into the third dimension, 3D integration has progressively become the primary building block of advanced electronic devices.
By extending the conventionally two-dimensional layouts, assembly, and interconnections into the third dimension, 3D integration has progressively become the primary building block of advanced electronic devices.
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